发明名称 WASTE GAS TREATMENT APPARATUS FOR SEMICONDUCTOR PROCESSING
摘要 PROBLEM TO BE SOLVED: To provide a waste gas treatment apparatus capable of efficiently decomposing and detoxifying a waste gas for processing and at the same time saving the plasma ignition electric power and improving the durability while making the entire body compact and economical. SOLUTION: A high frequency discharge pipe 4 for generating plasma for treating a waste gas discharge out of a semiconductor processing chamber 1 is composed of an insulating tubular container 5 having a waste gas introduction inlet 5a and a discharge outlet 5b and an induction coupling type electrode 9 for high frequency electric discharge wound around the outer circumference like a spiral coil. The electrode for high frequency electric discharge is composed of a conductive metal pipe 10 with a large diameter wound like a coil in a manner that cooling water is made to flow in the inside and a high frequency electric power wire 11 with a small diameter arranged between neighboring spiral pitches of the conductive metal pipe 10 with a large diameter, electrically connected with the conductive metal pipe 10 with a large diameter, and wound like a coil.
申请公布号 JP2002210330(A) 申请公布日期 2002.07.30
申请号 JP20010011400 申请日期 2001.01.19
申请人 PEARL KOGYO KK 发明人 NODA KAZUTOSHI;SONODA HIROAKI;MASUI YOSHIHIRO;SAEKI NOBORU
分类号 H05H1/28;B01D53/68;B01J19/08;C23C16/44;H01L21/302;H01L21/3065;H01L21/31;H05H1/30 主分类号 H05H1/28
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