发明名称 Semiconductor device and method of production of the same
摘要 A semiconductor device comprising a semiconductor substrate on which metal bumps having narrowed base portions are bonded and coated on its top surface with a resin covering the base portions of the metal bumps, improving reliability of the bump bonds. Also, a method of production of a semiconductor device including steps of forming metal bumps in a wafer state, coating a resin for protecting a wiring surface of a semiconductor chip in the wafer state and cutting the semiconductor chip from the wafer, wherein the metal bumps have narrowed base portions and are bonded to the wiring surface of the semiconductor chip and the resin is coated covering the base portions of the metal bumps.
申请公布号 US6425516(B1) 申请公布日期 2002.07.30
申请号 US20000558863 申请日期 2000.04.27
申请人 SONY CORPORATION 发明人 IWATSU SATOSHI;IWAFUCHI TOSHIAKI;SAITO TAKASHI
分类号 H01L23/12;B23K3/06;H01L21/60;H01L23/28;H01L23/29;H01L23/31;H01L23/485;(IPC1-7):B23K31/02;H01L21/44 主分类号 H01L23/12
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