| 摘要 |
A method for forming a three-component film containing metal, silicon and nitrogen for use in semiconductor devices on a substrate. The method of the present invention comprises the steps of: preparing separate reactive gases each including at least one selected from the group consisting of a gaseous metal compound, a gaseous silicon compound and an ammonia gas under conditions such that the gaseous meta compound and the ammonia gas does not form a mixture; determining a sequential gas supply cycle of the reactive gases so that supplies of the gaseous metal compound, the gaseous silicon compound and the ammonia gas are each included at least once within one gas supply cycle; and applying the reactive gases to the substrate by repeating the gas supply cycle at least once. According to the present invention, a three-component nitride film can be formed with a uniform thickness despite unevenness of a semiconductor substrate surface.
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