发明名称 Test circuit for testing semiconductor memory
摘要 Banks are arranged on a memory chip, forming a matrix. A data input/output circuit is provided at one side of the memory chip. A data bus is provided among the banks and connected to the data input/output circuit. Each bank has a plurality of memory cell arrays a cell-array controller, a row decoder, column decoders, and a DQ buffer. The cell-array controller and the row decoder oppose each other. The column decoders oppose the DQ buffer. Local DQ lines are provided between the memory cell arrays, and global DQ liens extend over the memory cell arrays. The local DQ lines extend at right angles to the global DQ lines.
申请公布号 US6426912(B2) 申请公布日期 2002.07.30
申请号 US20010887768 申请日期 2001.06.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TODA HARUKI
分类号 G11C11/407;G11C5/02;G11C7/02;G11C7/10;G11C7/18;G11C11/401;G11C11/409;G11C29/00;G11C29/12;H01L21/8242;H01L27/108;(IPC1-7):G11C8/00 主分类号 G11C11/407
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