发明名称 |
Active matrix display device having multiple gate electrode portions |
摘要 |
In a thin-film transistor of multi-gate structure, the width of a channel forming region 108 closest to a drain region 102 is made the narrowest. This prevents a transistor structure closest to the drain region from first deteriorating. Further, the channel length at the vicinity of a center of an active layer is intentionally widened, so that the amount of current flowing through the vicinity of the center of the active layer is decreased and the deteriorating phenomenon due to heat accumulation is prevented. Therefore, a semiconductor device with a high reliability is realized.
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申请公布号 |
US6426517(B2) |
申请公布日期 |
2002.07.30 |
申请号 |
US20000736139 |
申请日期 |
2000.12.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HAYAKAWA MASAHIKO;TSUKAMOTO YOSUKE |
分类号 |
G02F1/1368;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L29/04;H01L29/76;H01L27/01 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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