| 摘要 |
A polishing process monitoring apparatus of a semiconductor wafer is provided, which is capable of monitoring correctly the process independent of various factors affecting optical measurement, such as the configuration, material, and size of a layered structure on the wafer, and the geometric shapes of patterns and their arrangement for respective semiconductor chips. This apparatus is comprised of (a) a light irradiating means for irradiating a detection light beam to a semiconductor wafer, (b) a first light receiving means for receiving a specular-reflected light beam generated by reflection of the detection light beam at the wafer and for outputting a first signal according to an amount of the specular-reflected light beam, (c) a second light receiving means for receiving a scattered/diffracted light beam generated by scattering or diffraction of the detection light beam at the wafer and for outputting a second signal according to an amount of the scattered/diffracted light beam, and (d) a monitoring means for monitoring a polishing process of the wafer by using the first and second signals. |
