发明名称 |
Gunn diode, NRD guide gunn oscillator, fabricating method of gunn diode and structure for assembly of the same |
摘要 |
A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage on the active layer, and a concave portion which is cut from around the first electrode in a direction of the second semiconductor layer and the active layer and which subdivides the second semiconductor layer and the active layer to which the first electrode is connected as a region which functions as a Gunn diode. Since etching for defining a region that is to function as a Gunn diode is performed by self-alignment dry etching utilizing electrode layers formed above this region as masks, variations in characteristics are restricted. There are also disclosed a NRD guide Gunn oscillator attached to the NRD guide for obtaining a high frequency oscillation output of the Gunn diode, a fabricating method of the Gunn diode, and a structure for assembly of the Gunn diode.
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申请公布号 |
US6426511(B1) |
申请公布日期 |
2002.07.30 |
申请号 |
US20000540041 |
申请日期 |
2000.03.31 |
申请人 |
NEW JAPAN RADIO CO., LTD. |
发明人 |
NAKAGAWA ATSUSHI;WATANABE KENICHI |
分类号 |
H01L29/86;H01L47/02;H03B7/14;H03B9/14;(IPC1-7):H01L47/02;H01L29/861 |
主分类号 |
H01L29/86 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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