发明名称 Flash memory and manufacturing method therefor
摘要 In a flash memory that has a floating gate, a control gate, and an erase gate that are all mutually insulated, in which data erasing is performed by extracting electrons from the corner edge of the floating gate to the erase gate via an insulation film, the insulation film between the floating gate and the erase gate is formed so as to have a uniform thickness at its corner part.
申请公布号 US6426257(B1) 申请公布日期 2002.07.30
申请号 US20000552226 申请日期 2000.04.19
申请人 NEC CORPORATION 发明人 KANAMORI KOHJI
分类号 H01L21/8247;H01L21/28;H01L21/31;H01L21/336;H01L27/105;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 主分类号 H01L21/8247
代理机构 代理人
主权项
地址