发明名称 |
Semiconductor light-emitting device |
摘要 |
In a semiconductor light-emitting device including an MQW diffraction grating structure mainly used in a gain-coupled DFB laser, the ratio of the gain coupling coefficient to the index coupling coefficient is increased by making each well layer in MQW-A thicker than that in MQW-B. Each well layer and each barrier layer in the MQW structure are made of different compositions of GaInAsP. This implements a semiconductor light-emitting device with high wavelength stability, which does not induce any mode hop even during modulation with high output power or even when external optical feedback is present.
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申请公布号 |
US6426515(B2) |
申请公布日期 |
2002.07.30 |
申请号 |
US20010820929 |
申请日期 |
2001.03.30 |
申请人 |
FUJITSU LIMITED |
发明人 |
ISHIKAWA TSUTOMU;KOBAYASHI HIROHIKO;YAMAMOTO TSUYOSHI;SHOJI HAJIME |
分类号 |
H01S5/12;H01S5/343;(IPC1-7):H01L29/06;H01L31/072;H01L31/109;H01L31/032;H01L31/033 |
主分类号 |
H01S5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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