发明名称 Method of forming a protective conductive structure on an integrated circuit package interconnection
摘要 The invention provides a method of forming a conductive structure on an integrated circuit substrate. A metal bump, of a first material, is structured on the substrate so that the metal bump electrically contacts a metal part on the substrate. A protective layer is formed on the metal bump. The first material has a first conductivity. The protective layer is of a second material which has a second conductivity which is more than the first conductivity.
申请公布号 US6426176(B1) 申请公布日期 2002.07.30
申请号 US19990226992 申请日期 1999.01.06
申请人 INTEL CORPORATION 发明人 DANIELSON DONALD D.;MILLER STANFORD
分类号 H01L21/60;H01L23/485;(IPC1-7):G03F7/00;H01L21/44 主分类号 H01L21/60
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