发明名称 |
Method of forming a protective conductive structure on an integrated circuit package interconnection |
摘要 |
The invention provides a method of forming a conductive structure on an integrated circuit substrate. A metal bump, of a first material, is structured on the substrate so that the metal bump electrically contacts a metal part on the substrate. A protective layer is formed on the metal bump. The first material has a first conductivity. The protective layer is of a second material which has a second conductivity which is more than the first conductivity. |
申请公布号 |
US6426176(B1) |
申请公布日期 |
2002.07.30 |
申请号 |
US19990226992 |
申请日期 |
1999.01.06 |
申请人 |
INTEL CORPORATION |
发明人 |
DANIELSON DONALD D.;MILLER STANFORD |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):G03F7/00;H01L21/44 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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