发明名称 |
Differential pressure chemical-mechanical polishing in integrated circuit interconnects |
摘要 |
A method is provided for manufacturing an integrated circuit having a semiconductor substrate with a semiconductor device. A dielectric layer is formed on the semiconductor wafer and an opening is formed in the dielectric layer. A barrier layer is deposited to line the opening and a conductor core is deposited to fill the channel opening over the barrier layer. The semiconductor wafer is then subjected to chemical-mechanical polishing using a differential pressure between the center of the semiconductor wafer and its periphery.
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申请公布号 |
US6426297(B1) |
申请公布日期 |
2002.07.30 |
申请号 |
US20010905296 |
申请日期 |
2001.07.13 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SAHOTA KASHMIR S.;ACHUTHAN KRISHNASHREE;LOPATIN SERGEY D. |
分类号 |
B24B37/04;B24B49/16;H01L21/321;H01L21/768;(IPC1-7):H01L21/382;H01L21/461 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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