| 摘要 |
A method to etch passivation layers and an antireflective layer on a substrate, comprising: forming a metal layer on the substrate; forming the antireflective layer on the metal layer; forming the passivation layers on the antireflective layer, wherein the passivation layer consisting of a silicon oxide layer on the antireflective layer and a silicon nitride layer on the silicon oxide layer; etching the silicon nitride layer in a first etching chamber, wherein the silicon nitride layer is etched in a uniformity of less than 10% in the first etching chamber; etching the silicon oxide layer in a second etching chamber, wherein the silicon oxide layer is etching in a uniformity of less than 5% in the second etching chamber; etching the antireflective layer in the second etching chamber to expose a surface of the metal layer for metal contacts of integrated circuits.
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