| 摘要 |
PURPOSE: To obtain an insulated-gate type thin film semiconductor device, which is little deteriorated the characteristics, by a method wherein an amorphous semiconductor film is etched into specified first forms to form insular semiconductor regions and after a photo annealing is performed on the insular semiconductor regions to crystallize the insular semiconductor regions or to increase the crystallinity of the insular semiconductor regions, the specified parts of the insular semiconductor regions are etched to form second forms of semiconductor regions. CONSTITUTION: An amorphous semiconductor film is etched into first forms, whose narrowest parts are less thin 100μm in width (b), to form insular semiconductor regions 11. Then, a photo annealing is performed on the regions 11 to crystallize the regions 11 or to increase the crystallizability of the regions 11. Then, parts, on which at least a gate electrode 16 or a channel is formed, of the end parts 14 of the regions 11 are etched in a width of 10μm or wider from the end parts 14 to form second forms of semiconductor regions 15. After that, a gate insulating film, for example, is formed in such a way as to cover the regions 15 and after the gate electrodes 16 are formed in such a way as to cover the etched parts of the regions 15, impurities are introduced in the amorphous semiconductor film using the electrodes 16 as masks. |
