| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device is provided to be capable of enlarging the surface of a capacitor by improving the structure of the capacitor using a refractory silicide layer and a polysilicon layer. CONSTITUTION: After sequentially forming the third insulating layer(19), a passivation layer(20), and the fourth insulating layer(21) on a semiconductor substrate(100) having transistors and bit lines, the first refractory silicide layer(22), a polysilicon layer(23), and the second refractory silicide layer(24) are formed on the resultant structure. A predetermined pattern is formed by selectively patterning the first refractory silicide layer, polysilicon layer, and second refractory silicide layer. A buried contact opening portion is formed by selectively etching the resultant structure for exposing a source and drain region. Then, a storage node is formed on the resultant structure by using a conductive layer.
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