| 摘要 |
PURPOSE: A non-volatile memory device and a fabricating method thereof are provided to increase a lifetime of a programmed cell and a coupling ratio by positioning an erase gate inside a control gate, and to improve step coverage of a cell by etching an insulation layer filled in each separated space of a floating gate and interlayer dielectric through a chemical mechanical polishing(CMP) process. CONSTITUTION: A gate insulation layer is formed on a semiconductor substrate. A plurality of floating gates(43a) are formed on the gate insulation layer. A plurality of erase gates(46) are formed on each floating gate, separated from each other by a predetermined distance. An interlayer dielectric is formed on an interface between the erase gate and the floating gate. A plurality of control gates(48) surround the upper surface and the side surface of each erase gate. A source/drain is formed in the surface of the semiconductor substrate at the surfaces of both sides of the floating gate.
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