| 摘要 |
PURPOSE: A redundancy circuit is provided to prevent the generation of a reverse current by determining whether a cell address signal is a normal signal or a redundancy signal. CONSTITUTION: Each source terminal of two or more address signal applying MOS(Metal Oxide Semiconductor) transistors(N41,N42) is connected to a ground voltage supplying unit. An address signal is inputted to a gate terminal of the address signal applying MOS transistors(N41,N42). Two or more first fuses(F41) are respectively connected to a first output terminal and the address signal applying MOS transistors(N41,N42) and control a voltage precharged to the first output terminal, which is discharged to the ground voltage supplying unit through the address signal applying MOS transistors(N41,N42). Each source terminal of two or more address applying MOS transistors(N43,N44) is connected to the ground voltage supplying unit. An address signal is inputted to a gate terminal of the address applying MOS transistors(N43,N44). Two or more second fuses are connected between the pair of address applying MOS transistors(N43,N44) and a central node. An address signal switching unit connected between the first output terminal and the central node controls a supplying voltage according to a level-type address signal, which is inputted through the address applying MOS transistors(N43,N44) and the second fuses, to be transferred to the first output terminal.
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