METHOD FOR CRYSTALLIZING SILICON THIN FILM

摘要

PURPOSE: A method for crystallizing a silicon thin film is provided to directly make the amorphous silicon to a single crystal on an MILC(Metal Induced Lateral Crystallization) process at the low temperature by applying a crystal filtering method. CONSTITUTION: An amorphous silicon thin film is formed on a substrate. A crystallization source region(60), an active layer region(67) and a channel part(63) connecting with the both regions including a part applying the MIC(Metal Induced Crystallization) source metal(61) are formed by patterning the amorphous silicon thin film. The crystallization source region and the active layer region are crystallized by heating the patterned amorphous silicon thin film. An end part of the crystallization source region facing to the active region is inclined to an axis connecting the crystallization source region with the active layer region.