| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can restrain excessive polishing at the periphery of a nitride film by restraining weight loss of the nitride film in a planarization treatment. SOLUTION: This method for manufacturing a semiconductor device is provided with a process for forming the nitride film 3 on a semiconductor substrate 2; a process wherein the nitride film is patterned, the semiconductor substrate is etched by using the patterned nitride film as a mask, and trenches 5 are formed; a process wherein an oxide film 4 is deposited with the trenches being filled ad an upper part of the nitride film is covered; a process for patterning a resist film 6 on the oxide film; a process for etching the oxide film on the nitride film; and a process wherein the oxide film is subjected to planarization treatment; and in the process of etching the oxide film, the oxide film made to remain on the nitride film. |
