| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device which is large in electrostatic breakdown voltage by reducing on-resistance through reduction in size of a gate pad and increase in effective cell area, and by improving the current- voltage characteristic of a Zener diode through the increased width of PN joint. SOLUTION: A Zener diode 11 is arranged in the periphery CPP of a chip that surrounds a unit cell UCP and a gate pad GPP in a first direction D1 or a fourth direction D4. The Zener diode 11 is provided with an N+ type layer 1B, a P type layer 33, an N+ type layer 32, a P type layer 31, and an N+ type layer 1A which extend in the first direction D1 or the fourth direction D4. |
