发明名称 |
METHOD FOR DEPOSITING SILICON-BASED THIN FILM, METHOD FOR DEPOSITING SILICON-BASED SEMICONDUCTOR LAYER AND PHOTOVOLTAIC ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing a silicon semiconductor layer having excellent photoelectric characteristics at a film deposition rate of an industrially practical level and also to provide a photovoltaic element in which the silicon-based semiconductor layer deposited by the method is used. SOLUTION: In this method, raw-material gas is introduced into a vacuum vessel to deposit the silicon-based semiconductor layer containing a microcrystal on a substrate introduced into the vacuum vessel by a plasma-enhanced CVD method. This method comprises a first step where a first region is deposited by using the raw-material gas containing halogen atoms and a second step where a second region is deposited on the above first region under the condition that the amount of the raw-material gas containing halogen atoms is smaller than that used in the above first step. |
申请公布号 |
JP2002206168(A) |
申请公布日期 |
2002.07.26 |
申请号 |
JP20010325691 |
申请日期 |
2001.10.23 |
申请人 |
CANON INC |
发明人 |
KONDO TAKAHARU;YAMASHITA TOSHIHIRO;SANO MASAFUMI;HAYASHI SUSUMU;TAKAI YASUYOSHI;SAKAI AKIRA |
分类号 |
C23C16/24;C23C16/505;C23C16/511;C30B25/10;H01L21/205;H01L31/0224;H01L31/0368;H01L31/0392;H01L31/04;H01L31/18 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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