发明名称 HIGH-MOLECULAR COMPOUND, RESIST MATERIAL AND METHOD FOR FORMING PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a resist material which is produced by using a high- molecular compound of the present invention as a base resin, which is sensitive to high energy rays, and excellent in sensitivity, resolution and etching resistance, and accordingly which is useful in microfabrication with electron beam or far infrared rays. SOLUTION: The high molecular compound having a weight average molecular weight of 1,000-500,000 contains a recurring unit expressed by formula (1-1) or (1-2) (wherein, R1 is H or a 1-6C linear, branched or cyclic alkyl; R2 is H or a 1-15C acyl or alkoxycarbonyl, and a part or the whole of hydrogen atoms existing on the constituting carbon atoms may be substituted with a halogen atom; Y is a 1-15C divalent group and forms a cycling structure together with a group of bonding atoms; and k is 0 or 1, and m is an integer of 0-5).
申请公布号 JP2002206012(A) 申请公布日期 2002.07.26
申请号 JP20010331910 申请日期 2001.10.30
申请人 SHIN ETSU CHEM CO LTD 发明人 TACHIBANA SEIICHIRO;NAKAJIMA MUTSUO;NISHI TSUNEHIRO;KANOU TAKESHI;HASEGAWA KOJI;WATANABE TAKESHI;HATAKEYAMA JUN
分类号 G03F7/039;C08F220/18;C08F222/06;C08F232/00;C08G61/06;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址