发明名称 THINNING TREATMENT METHOD OF SEMICONDUCTOR WAFER
摘要 <p>PROBLEM TO BE SOLVED: To provide a thinning treatment method of a semiconductor wafer wherein damages are not produced on a semiconductor wafer in a treatment process. SOLUTION: In this thinning treatment method of a semiconductor wafer, a semiconductor wafer 10, after a circuit has been formed, is thinned. After the back of a circuit forming surface of the semiconductor wafer 19 is eliminated by mechanical polishing, a stress layer generated by the polishing is eliminated, and the thinned semiconductor wafer 10 after the stress layer is eliminated is struck on an adhesive sheet 27 attached on a sheet frame 26. The sheet frame 26 on which the semiconductor wafer 10 is stuck is accommodated in a frame cassette 29. As a result, the shape of the semiconductor wafer 10 which is thinned and brittle is held, and breakdown can be prevented, by protecting the semiconductor wafer 10 from external force, when it is handled.</p>
申请公布号 JP2002208625(A) 申请公布日期 2002.07.26
申请号 JP20010002195 申请日期 2001.01.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAJI HIROSHI
分类号 B65G49/07;H01L21/304;H01L21/677;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 B65G49/07
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