| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method which can realize a high etching rate in the plasma treatment of the object of treatment, which includes silicon, and which improves viewing quality without giving a milky appearance on a surface. SOLUTION: In the plasma treatment method etching the surface of a semiconductor wafer 7, the mix gas of sulfur hexafluoride and helium is used as plasma generation gas. A fluorine radical (notation *) as active matter reacting with silicon on the surface of the semiconductor wafer 7, gas-like SiF4 (notation○) generated by reaction and the compound SFn (notation) of fluorine and sulfur are removed by helium gas as carrier gas. The drop of the etching rate due to the re-adhesion of a reactive product and the drop of viewing property due to the dispersion of etching can be prevented.
|
