发明名称 SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To improve the strength of a diaphragm in a diaphragm semiconductor pressure sensor using an SOI(silicon-on-insulator) board. SOLUTION: This pressure sensor is provided with an SOI board 10 that a first silicon board 11 and a second silicon board 12 are adhered with each other with a silicon oxide film 13 in between. While the first silicon board 11 is left as it is, the second silicon board 12 and silicon oxide film 13 are removed from the side of the second silicon board 12 to form a first recessed part 14 and a diaphragm 15 for pressure detection. A second recessed part 16 is formed by partially removing the first silicon board 11 on the bottom of the first recessed part 14.
申请公布号 JP2002208708(A) 申请公布日期 2002.07.26
申请号 JP20010004030 申请日期 2001.01.11
申请人 DENSO CORP 发明人 YOKOYAMA KENICHI;TAI AKIRA;KAWASAKI EIJI;TERADA MASAKAZU
分类号 G01L9/04;G01L9/00;H01L21/02;H01L21/20;H01L29/84;(IPC1-7):H01L29/84 主分类号 G01L9/04
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