| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor which has high mobility, low threshold voltage and less variations by lowering the capture level of a semiconductor layer formed by a low-temperature process as well as MOS boundary. SOLUTION: Light is radiated onto a semiconductor layer 103 on a substrate 101 at 100 deg.C or lower in substrate temperature for crystallization, and then the semiconductor layer 103 is treated by a plasma at 100 deg.C or lower in substrate temperature. Furthermore, a gate insulation film 105 is formed on the semiconductor layer 103 at 100 deg.C or lower in substrate temperature, and it is heated at 100 deg.C or higher.
|
