| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and its method which precisely measure the temperature of a material, as a material to be treated, inside an etching treatment chamber when a treatment such as an etching treatment or the like is executed to a semiconductor element. SOLUTION: The temperature measuring device for a wafer surface treatment apparatus which works a fine pattern by a plasma etching operation is a device which is composed of an electrode used to mount a water to be surface-treated, a treatment-gas supply means, a plasma generation means and a high-frequency power supply which applies a bias voltage to the electrode. The device has a structure for cuttings a specific wavelength of light emitted from a lamp when a member inside the etching treatment chamber is heated by the light emitted from a lamp heater 10 or the light from the lamp heater is not incident on a radiation thermometer 22. Thereby, the temperature of a heating plate 12 as a heating member can be measured precisely. As a result, the output of the heating lamp 10 can be controlled precisely, and the heating plate 12 and a quartz plate 13 coming into contact with the heating plate 12 can be maintained at a constant temperature. |
