| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein yield is further improved, as compared with the conventional case. SOLUTION: This method for manufacturing a semiconductor device is provided with a process for forming a first hole 101a which will not penetrate a retaining-side silicon wafer 101, a process for forming a substratum insulating film 102, a process for forming a main connecting plug 105a by filling the first hole 101a with copper, a process for forming a semiconductor film 108 via an intermediate insulating film 109 on one surface side of the retaining-side silicon wafer 101, a process for forming an element on the semiconductor film 108, a process for exposing the bottom surface of the main connecting plug 105a by polishing the other surface of the retaining-side silicon wafer 101, a process for forming a second hole 111 which is formed from an element-forming surface of the semiconductor film 108 and reaches the main connecting plug 105a, and a process for forming an auxiliary connecting plug 112a which connects electrically the element and the main connecting plug 105a, by filling the second hole 111 with copper. |
