| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of lithographic steps in a package process of a wafer level CSP. SOLUTION: A method for manufacturing a semiconductor device comprises a step of depositing seed layers 116 and 117 on a semiconductor element and a wafer, having an electrode pad 114 formed to be electrically connected to the semiconductor element; a step of forming a mask layer having an opening in a region, including an upper part of the pad 114 on the layers 116 and 117; a step of sequentially depositing a conductive layer 120 and a diffusion suppressing layer 121 for suppressing a diffusion of an element for constituting a solder electrode, in the layer 120 selectively on the layers 116 and 117 exposed at a bottom of the opening, by using an electrolytically plating method and forming a repositioning a wiring 123; a step of removing the layers 116 and 117 with the wiring 123 as a mask; and a step of forming the solder electrode 126 connected to the wiring 123. |
