| 摘要 |
PROBLEM TO BE SOLVED: To reduce variations of electrostatic capacity between a movable electrode and a fixed electrode. SOLUTION: As a semiconductor substrate 100, a single crystal substrate 101 is used, and an impurity diffused layer 102 is formed on its surface layer and a semiconductor layer 103 is formed thereon. In addition, a cavity 2 is formed in the impurity diffused layer 102 in the semiconductor substrate 100. A supporting part (base plate 3 and frame 5), a beam structural body 6 provided with a movable electrode that changes depending on mechanical quantity, and fixed electrodes 16b and 22b are partitioned by the cavity 2 extending horizontally and grooves 4a and 4b formed extending vertically in the semiconductor substrate 100. The fixed electrodes 16b and 22b are opposite to the movable electrode of the beam structural body 6. |
