| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which increase of current consumption is suppressed, a word line of a memory cell array is boosted with a low cost, and destruction of a word can be prevented. SOLUTION: A semiconductor memory is provided with a memory cell array A 140, a block selector group A 145, a memory cell array B 150, a block selector group B 155, boosting circuits 120A, 120B, lines 130A, 130B to be boosted, and a boosting control circuit 110 controlling the boosting circuits 120A, 120B. Then the boosting circuits 120A, 120B are constituted of capacitors C1A, C1B for boosting and pMOS transistors T1A, T1B for pre-charge. As the boosting circuits 120A, 120B and the lines 130A, 130B to be boosted are provided for each memory cell array, capacity of lines 130A, 130B to be boosted is made 1/2, and current consumption is reduced.
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