METHOD FOR FORMATION OF INSULATING FILM, SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To solve the problem that, when a deposition method such as a plasma CVD method is used, the surface of a semiconductor becomes an interface between the semiconductor and an insulating film (a gate insulating film), that an interface state density is increased because ion damage cannot be avoided and that a satisfactory element characteristic cannot be obtained when the semiconductor is used as a thin-film transistor. SOLUTION: The method for forming the insulating film on the surface of the semiconductor is composed of a process in which a first insulating film is formed in such a way that the surface of the semiconductor is oxidized in an atmosphere containing an oxygen atom active specifies at a substrate temperature in the whole process of 600 deg.C or less and a process in which a second insulating film is formed on the first insulating film by the deposition method.