| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that a silicon active layer of an SOI substrate (SOI layer) is made smaller in thickness than heretofore, following fine structure of transistors, so that, after impurities area introduced into a complete depleted SOI transistor, etc., crystallization of an impurity diffused layer cannot be sufficiently restored even by annealing under heat treatment for example. SOLUTION: Impurities are introduced into the source and drain of a silicon active layer 3, and they are annealed by heat treatment for example to form impurity diffused layers 12 and 13. Then, the channel formation area 14 of the silicon active layer 3 is made smaller in thickness than the impurity diffused layers 12 and 13.
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