| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a film which can prevent the warp of a large-diameter substrate wafer due to its dead weight and can grow the film with even thickness on the wafer, and a jig used therein. SOLUTION: One end which is a wafer carry-in/carry-out section of a ring- shaped body is pushed inward into a concave shape to form a jig. Many protrusions for supporting a wafer are formed at intervals on a wafer mounting surface of the jig to form a jig for supporting the wafer. The jig for supporting the wafer is fixed to a quartz wafer boat support, and the large-diameter substrate wafer having a diameter of 300 mm or above is so placed that the rear face of the wafer may be supported by the protrusion-formed surface of the jig for supporting the wafer, and then a film is formed by a vapor phase growth method in a reaction chamber.
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