发明名称 III NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To obtain a light emitting element utilizing a fluorescent material in which the fabrication process is simplified, control of the quantity of fluorescent material to add is facilitated, and high luminance emission is attained by stimulating the fluorescent material efficiently. SOLUTION: In a light emitting element constituted by forming a plurality of III nitride compound based semiconductor layers on a sapphire substrate, a fluorescent material is incorporated in the light emitting element itself by adding the fluorescent material to any one semiconductor layer. When that layer is grown by MOCVD, a layer containing the fluorescent material is formed by supplying a gas containing the fluorescent material as a part of material gas.
申请公布号 JP2002208730(A) 申请公布日期 2002.07.26
申请号 JP20010001142 申请日期 2001.01.09
申请人 TOYODA GOSEI CO LTD 发明人 WATANABE HIROSHI;SHIBATA NAOKI
分类号 H01L33/10;H01L33/32;H01L33/50 主分类号 H01L33/10
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