| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for manufacturing high-purity zirconium or hafnium powder by which high-purity zirconium or hafnium powder in which impurities to be a hindrance to the assurance of the operation function of a semiconductor are decreased can be obtained with safety at a low cost. SOLUTION: The method for manufacturing the high-purity zirconium or hafnium powder comprises steps of applying electron beam melting to zirconium or hafnium raw material to highly purity the raw material and then casting the resultant molten metal into an ingot, heating the resultant high-purity zirconium or hafnium ingot or chips or the like to >=500 deg.C in a hydrogen atmosphere to apply hydrogenation, cooling the ingot and peeling off zirconium or hafnium hydride powder from the ingot to obtain high-purity zirconium hydride or hafnium hydride powder, and removing hydrogen from the high-purity zirconium hydride or hafnium hydride powder.
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