| 摘要 |
PROBLEM TO BE SOLVED: To prevent a pixel part from generating cracks by relaxing thermal stress. SOLUTION: On the upper layer of a thin film transistor used for an active matrix light emitting device, the third insulation layer made of silicon nitride or silicon nitric oxide is formed together with a positive electrode, an organic compound layer, and a negative electrode containing alkali metal between the fourth insulation layer, made of carbon as a main component and the third insulation layer. The light emitting element is formed between reverse tapered shaped separation walls made of insulation material.
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