| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance and high-reliability semiconductor device and the manufacturing method thereof, wherein there are mounted on a single semiconductor substrate a bipolar transistor for high-withstanding- voltage applications and a bipolar transistor for high-speed applications which have respective epitaxial-base structures to mix them with each other, and their optimal maximum power-supply voltages are realized respectively and their respective high breakdown voltage characteristic and high-speed characteristics can be displayed fully. SOLUTION: There are mounted on a P-type Si substrate 10 a vertical NPN bipolar transistor 50a for high-speed applications and a vertical NPN bipolar transistor 50b for high breakdown voltage applications which have respective epitaxial-base structures to mix them with each other. Since a recessed cavity is formed on the surface of an N-type collector layer 14a of the vertical NPN bipolar transistor 50a for high-speed applications, the thickness of its N-type collector layer 14a is made smaller than the thickness of an N-type collector layer 14b of the NPN bipolar transistor 50b for high breakdown voltage applications.
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