| 摘要 |
PROBLEM TO BE SOLVED: To reduce failures in the breakdown voltage between a light-shielding film and a substrate, and at the same time, to reduce smearing. SOLUTION: This solid-state image pickup device has a light-receiving section that is formed near the surface of a semiconductor substrate for carrying out photoelectric conversion; a charge transfer section that is formed near the surface of a semiconductor substrate being different from the light-receiving section and at the same time, reads a signal charge from the light-receiving section for transferring; a transfer gate electrode section that is formed on the charge transfer section via a gate insulating film; a light-shielding section that is formed at the upper section of the transfer gate electrode section; and an insulating film, that is formed between the transfer gate electrode and light- shielding sections directly above the light-shielding section or directly above and below the light-shielding section. In the light-shielding section, a s metal film mainly made of Ti and high-melting-point metal film are laminated in this order.
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