| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate semiconductor device, having high productivity and reliability and high maximum interrupting current and high resistance to load short circuit. SOLUTION: This semiconductor device has a first main electrode region 1 exposed on the rear surface of a semiconductor substrate, first conductivity- type base regions 2, 3 disposed on the first main electrode region, a second conductivities-type base region 4 disposed on the first conductivity-type base regions, a second main electrode region 5 of the first conductive type selectively disposed on the second conductivity-type base region, a groove which is formed on the semiconductor substrate and has a side surface 11 having a circular curvature, a gate insulating film 7 disposed inside this groove, and a gate electrode 6 disposed inside this gate insulating film. The second conductivity-type base region and the second main electrode region are exposed on the side surface 11 of the groove, and the bottom portion 12 of the groove reaches the first conductivity-type base region.
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