发明名称 |
SEMICONDUCTOR MEMORY PROVIDED WITH REDUNDANCY CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having a redundancy circuit substituted for a redundancy cell corresponding to a defective type of a memory. SOLUTION: A semiconductor memory comprises a redundancy memory cell and a fuse circuit having three output states being different each other according to an input signal, and is provided with a redundancy circuit having a redundancy word line decoder substituting for a redundancy cell corresponding to a defective type generated in a normal cell by controlling cutting of a fuse according to an input signal.
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申请公布号 |
JP2002208295(A) |
申请公布日期 |
2002.07.26 |
申请号 |
JP20010343608 |
申请日期 |
2001.11.08 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
JEON BYUNG-GIL;KIM KI-NAM |
分类号 |
G11C29/04;G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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