发明名称 SEMICONDUCTOR MEMORY PROVIDED WITH REDUNDANCY CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory having a redundancy circuit substituted for a redundancy cell corresponding to a defective type of a memory. SOLUTION: A semiconductor memory comprises a redundancy memory cell and a fuse circuit having three output states being different each other according to an input signal, and is provided with a redundancy circuit having a redundancy word line decoder substituting for a redundancy cell corresponding to a defective type generated in a normal cell by controlling cutting of a fuse according to an input signal.
申请公布号 JP2002208295(A) 申请公布日期 2002.07.26
申请号 JP20010343608 申请日期 2001.11.08
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 JEON BYUNG-GIL;KIM KI-NAM
分类号 G11C29/04;G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/04
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