发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the semiconductor film containing a rare gas element by a heat treatment. Furthermore, a first impurity region and a second impurity region formed in a semiconductor layer of a first n-channel TFT are provided outside a gate electrode. A third impurity region formed in a semiconductor layer of a second n-channel TFT is provided so as to be partially overlapped with a gate electrode. A third impurity region is provided outside a gate electrode. A fourth impurity region formed in a semiconductor layer of a p-channel TFT is provided so as to be partially overlapped with a gate electrode. A fifth impurity region is provided outside a gate electrode. |
申请公布号 |
US2002098628(A1) |
申请公布日期 |
2002.07.25 |
申请号 |
US20020051064 |
申请日期 |
2002.01.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HAMADA TAKASHI;MURAKAMI SATSOHI;YAMAZAKI SHUNPEI;NAKAMURA OSAMU;KAJIWARA MASAYUKI;KOEZUKA JUNICHI;TAKAYAMA TORU |
分类号 |
G02F1/133;G02F1/1362;H01L21/00;H01L21/02;H01L21/20;H01L21/3065;H01L21/322;H01L21/336;H01L21/77;H01L21/8234;H01L21/84;H01L27/04;H01L27/12;H01L29/04;H01L29/423;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/133 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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