发明名称 FERROELECTRIC THIN FILM, METAL THIN FILM OR OXIDE THIN FILM, AND METHOD AND APPARATUS FOR PREPARATION THEREOF, AND ELECTRIC OR ELECTRONIC DEVICE USING SAID THIN FILM
摘要 <p>A ferroelectric thin film, characterized in that it exhibits a layered crystal structure containing oxygen (O) and at least carbon, strontium (Sr), bismuth (Bi), tantalum (Ta) and niobium (Nb), has an empirical formula of SrBiyTa2O9±d or SrxBiy(Ta, Nb)2O9±d, provided that 0.90 ≤ x &lt; 1.00, 1.70 &lt; y ≤ 3.20, 0 ≤ d ≤ 1.00, and has a carbon content of 5 at % or less. The ferroelectric thin film has a composition range which is most suitable for providing good remanence polarization characteristics and also has a bismuth based layered crystal structure exhibiting high reliability.</p>
申请公布号 WO2002058129(P1) 申请公布日期 2002.07.25
申请号 JP2002000302 申请日期 2002.01.18
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