| 摘要 |
PURPOSE: A polymer which has excellent reactivity, rigidity and adhesion to the substrate, and undergoes a low degree of swelling during development, a resist material which uses this polymer as the base resin and hence exhibits much higher resolving power and etching resistance than conventional resist materials, and a pattern formation method using this resist material are provided. CONSTITUTION: The polymer contains repeating units represented by the following general formula 1a or 1b and has a weight-average molecular weight of 1,000 to 500,000, wherein R represents a hydrogen atom, a methyl group or CH2CO2R3; R2 represents a hydrogen atom, a methyl group or CO2R3; R3 represents a straight-chain, branched or cyclic alkyl group having 1 to 15 carbon atoms, and may be common to R1 and R2 or different therebetween; W represents a straight-chain or branched divalent hydrocarbon radical having 2 to 10 carbon atoms, which may have one or more ester linkages in its structure and may further be substituted by one or more other-atomic groups containing a heteroatom; and k is 0 or 1.
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