发明名称 |
Apparatus for growing a single crystalline ingot |
摘要 |
A chamber with a quartz crucible established therein for growing a single crystalline ingot with a predetermined diameter D which is to be put in the crucible. The quartz crucible is wrapped in a crucible supporter fixed to a rotational axis, with a heater surrounding the crucible support and a thermos surrounding the heater to prevent heat radiated from the heater from propagating into a wall of the chamber. A thermal shield is included which has a first cylindrical shielding part installed between the ingot and the crucible, a second flange type shielding part connected to an upper part of the first shielding part, and a third shielding part connected to a lower part of the first shielding part and protruding toward the ingot.
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申请公布号 |
US2002096109(A1) |
申请公布日期 |
2002.07.25 |
申请号 |
US20010920808 |
申请日期 |
2001.08.03 |
申请人 |
LEE HONG-WOO;CHOI JOON-YOUNG;CHO HYON-JONG;YOO HAK-DO |
发明人 |
LEE HONG-WOO;CHOI JOON-YOUNG;CHO HYON-JONG;YOO HAK-DO |
分类号 |
C30B29/06;C30B15/00;C30B15/14;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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