发明名称 Semiconductor integration circuit device
摘要 A semiconductor integrated circuit device includes a first variable delay circuit which delays a timing signal for activating a sense amplifier which is supplied with a signal read out from a memory array and amplifies the signal so that a timing difference between a dummy signal read out from a dummy memory cell and the timing signal of the sense amplifier is detected by a detection circuit to be made small in accordance with an output of the detection circuit, and a second variable delay circuit which adjusts a relative timing difference between the dummy signal and the timing signal of the sense amplifier.
申请公布号 US2002097623(A1) 申请公布日期 2002.07.25
申请号 US20020038663 申请日期 2002.01.08
申请人 HITACHI, LTD. 发明人 SUZUKI TAKESHI;NAKAHARA SHIGERU;HIGETA KEIICHI;KUSUNOKI TAKESHI
分类号 G06F1/10;G11C7/08;G11C7/22;G11C11/41;G11C11/419;H03L7/00;H03L7/081;(IPC1-7):G11C7/02 主分类号 G06F1/10
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