METHOD FOR FABRICATING GATE OXIDE LAYER THROUGH PARTIAL ETCH PROCESS

摘要

PURPOSE: A method for fabricating a gate oxide layer through a partial etch process is provided to eliminate a phenomenon that dopants are redistributed in an active region of a substrate, by eliminating the need to use an additional oxidation process. CONSTITUTION: The first gate oxide layer is deposited on the substrate(100). The first resist pattern for defining the second gate oxide layer is formed on the first gate oxide layer. The first gate oxide layer is partially etched to form the second gate oxide layer by using the first resist pattern as an etch mask. The first resist pattern is removed. The second resist pattern for defining the third gate oxide layer is formed on the entire surface of the first and second gate oxide layers. The third gate oxide layer which is relatively thick as compared with the second gate oxide layer, is formed in a region defining the third gate oxide layer.