发明名称 |
A method of manufacturing a metal cap layer for preventing damascene conductive lines from oxidation |
摘要 |
A semiconductor device (100) having a copper damascene BEOL structure. A metal cap layer (120) is formed over conductive lines (118) to prevent oxidation of the conductive lines (118) during subsequent processing steps. The metal cap layer (120) comprises a material other than the conductive line (118) material that is resistant to oxidation. The structure (100) is particularly beneficial for MRAM devices.
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申请公布号 |
US2002096775(A1) |
申请公布日期 |
2002.07.25 |
申请号 |
US20010798101 |
申请日期 |
2001.03.02 |
申请人 |
NING XIAN J. |
发明人 |
NING XIAN J. |
分类号 |
H01L21/768;H01L23/532;H01L27/22;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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