| 摘要 |
The present invention is characterized by including an electrode formed on surface of a semiconductor substrate, wherein said electrode includes a barrier layer consisting of amorphous or microcrystal expressed by the following expression: <paragraph lvl="0"><in-line-formula>M1xM21-x </in-line-formula>M1: Au, Pt, Ir, Pd, Os, Re, Rh, Tu, Cu, Co, Fe, Ni, V, Cr M2: Ta, Ti, Zr, Hf, W, Y, Mo, Nb.
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