| 发明名称 |
Magnetowiderstandeffekt-Element |
| 摘要 |
Disclosed is a magneto-resistance effect element indicating a larger magneto-resistance effect at room temperature under impression of low magnetic field is obtained with the construction wherein the characteristics of artificial metallic lattice membrane are exploited. <IMAGE> |
| 申请公布号 |
DE69332038(D1) |
申请公布日期 |
2002.07.25 |
| 申请号 |
DE1993632038 |
申请日期 |
1993.03.11 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SAKAKIMA, HIROSHI;SATOMI, MITSUO;TAKEUCHI, HIROSHI |
| 分类号 |
G11B5/39;G01R33/09;H01L43/08;(IPC1-7):G01R33/06 |
主分类号 |
G11B5/39 |
| 代理机构 |
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