发明名称 |
Magnetic random access memory |
摘要 |
A magnetic random access memory (MRAM) is disclosed. In order to achieve high integration, the MRAM includes a word line formed in an active region of a semiconductor substrate, and used as a read line and a write line; a ground line and a lower read layer positioned on opposite sides of the active region of the semiconductor substrate; a seed layer contacting the lower read layer, and being overlapped with the upper portion of the word line; an MTJ cell contacting the upper portion of the seed layer at the upper portion of the word line; and a bit line contacting the MTJ cell, and crossing the word line in a vertical direction.
|
申请公布号 |
US2002097599(A1) |
申请公布日期 |
2002.07.25 |
申请号 |
US20010033320 |
申请日期 |
2001.12.27 |
申请人 |
KANG CHANG YONG;KIM CHANG-SHUK |
发明人 |
KANG CHANG YONG;KIM CHANG-SHUK |
分类号 |
G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/115;H01L27/22;H01L43/00;H01L43/08;(IPC1-7):G11C17/02 |
主分类号 |
G11C11/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|